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| R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness. CASE OUTLINE 55QV Common Source ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25C (Pd) Thermal Resistance (JC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 300 W .6C/W 65V 20V -65 to +200C +200C ELECTRICAL CHARACTERISTICS @ 25C PER SIDE SYMBOL Vdss Idss Igss Vgs(th) Vds(on) gFS Crss Coss CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Reverse Transfer Capacitance Output Capacitance TEST CONDITIONS Vgs = 0V, Id = 2ma Vds = 28V, Vgs= 0V Vgs = 20V, Vds = 0V Vds = 10V, Id = 100ma Vgs = 10V, Id = 3A Vds = 10V, Id = 3A Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz 2 4 0.7 2.2 5 60 MIN 65 TYP 70 1 1 5 MAX UNITS V A A V V S pF pF This part is input matched. FUNCTIONAL CHARACTERISTICS @ 25C GPS d IMD3 Common Source Power Gain Drain Efficiency Intermodulation Distortion, 3rd Order Load Mismatch Vds = 28V, Idq = 0.6A, F = 900MHz, Pout = 120W Vds = 28V, Idq = 0.6A, F = 900MHz, Pout = 120W Vds = 28V, Idq = 0.6A, Pout=120W PEP, F1 = 900 MHz, F2 = 900.1 MHz Vds = 28V, Idq = 0.6A, F = 900MHz, Pout = 120W 13 50 -30 dB % dBc 5:1 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 |
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